new product uhf20fct vishay general semiconductor document number: 89064 revision: 13-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 1 dual common-cathode ultrafast recovery rectifier features ? oxide planar chip junction ? ultrafast recovery times ? soft recovery characteristics ? low switching losses, high efficiency ? high forward surge capability ? solder dip 260 c, 40 s ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency power factor correctors, switching mode power supplies, freewheeling diodes and secondary dc-to-dc rectification application. mechanical data case: ito-220ab epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002 and jesd22-b102 e3 suffix for consumer grade, meets jesd 201 class 1a whisker test polarity: as marked mounting torque: 10 in-lbs maximum primary characteristics i f(peak) 10 a x 2 v rrm 300 v i fsm 180 a t rr 25 ns v f at i f = 10 a 0.85 v t j max. 175 c uhf20fct pin 1 pin 2 pin 3 ito-220ab 1 2 3 maximum ratings (t a = 25 c unless otherwise noted) parameter symbol uhf20fct unit maximum repetitive peak reverse voltage v rrm 300 v maximum dc working forward current at t c = 125 c per device per diode i f(peak) 20 10 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode i fsm 180 a isolation voltage (ito-220ab only) from terminal to heatsink t = 1 min v ac 1500 v operating junction and storage temperature range t j , t stg - 55 to + 175 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit maximum instantaneous forward voltage per diode (1) i f = 5.0 a i f = 10.0 a t a = 25 c v f 0.96 1.02 - 1.20 v i f = 5.0 a i f = 10.0 a t a = 125 c 0.77 0.85 - - maximum reverse current per diode (2) v r = 300 v t a = 25 c t a = 125 c i r 0.06 25 5 150 a
new product uhf20fct vishay general semiconductor www.vishay.com for technical questions within your region, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com document number: 89064 revision: 13-may-08 2 notes: (1) pulse test: 300 s pul se width, 1 % duty cycle (2) pulse test: pulse width 40 ms notes: (1) without heatsink, free air (2) with infinite heatsink ratings and characteristics curves (t a = 25 c unless otherwise noted) maximum reverse recovery time i f = 0.5 a, i r = 1.0 a, i rr = 0.25 a t rr 20 25 ns maximum reverse recovery time per diode i f = 1.0 a, di/dt = 50 a/s, v r = 30 v, i rr = 0.1 i rm t rr 28 35 ns typical softness factor (tb/ta) i f = 10 a, di/dt = 200 a/s, v r = 200 v, t j = 125 c per diode s0.36- - typical reverse recovery current i rm 7.0 - a typical stored charge q rr 160 - nc typical forward recovery time per diode i f = 10 a, di/dt = 80 a/s, v fr = 1.1 x v fmax t fr 150 - ns electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol uhf20fct unit typical thermal resistance per diode r ja (1) r jc (2) 50 4.6 c/w ordering information (example) package preferred p/n unit weight (g) package code base quantity delivery mode ito-220ab uhf20fct-e3/4w 1.74 4w 50/tube tube figure 1. forward power loss characteristics per diode 0 1 2 3 4 5 6 7 8 9 10 11 12 0246 8 10 12 a v erage for w ard c u rrent (a) a v erage po w er loss ( w ) d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = 0.2 d = 0.1 d = t p /t t p t figure 2. typical instantaneous forward characteristics per diode 1 10 100 0.2 0.4 0.6 0. 8 1.0 1.2 1.5 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 175 c t j = 25 c 0.1 t j = 125 c 0.3 0.5 0.7 0.9 1.1 1.3 1.4
new product uhf20fct vishay general semiconductor document number: 89064 revision: 13-may-08 for technical questions within your r egion, please contact one of the following: pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com www.vishay.com 3 package outline dimensions in inches (millimeters) figure 3. typical reverse leak age characteristics per diode figure 4. typical junction capacitance per diode 0.001 0.01 0.1 1 10 100 1000 10 20 30 40 50 60 70 8 0 90 100 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent ( a) t a = 125 c t a = 175 c t a = 25 c t a = 150 c 1 10 100 1000 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v stg = 50 m v p-p figure 5. typical transient thermal impedance per diode 0.1 1 10 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w ) 0.001 0.01 j u nction to case ito-220ab 0.076 (1.93) ref. 45 ref. pi n 3 2 1 0.404 (10.26) 0.3 8 4 (9.75) 0.076 (1.93) ref. 0.600 (15.24) 0.5 8 0 (14.73) 0.560 (14.22) 0.530 (13.46) 0.057 (1.45) 0.045 (1.14) 0.057 (1.45) 0.045 (1.14) 0.191 (4. 8 5) 0.171 (4.35) 0.671 (17.04) 0.651 (16.54) 0.035 (0. 8 9) 0.025 (0.64) 0.205 (5.21) 0.195 (4.95) 0.025 (0.64) 0.015 (0.3 8 ) 0.105 (2.67) 0.095 (2.41) 0.02 8 (0.71) 0.020 (0.51) 0.110 (2.79) 0.100 (2.54) 7 ref. 0.135 (3.43) dia. 0.122 (3.0 8 ) dia. 0.110 (2.79) 0.100 (2.54) 0.190 (4. 8 3) 0.170 (4.32) 7 ref. 7 ref. 0.140 (3.56) dia. 0.125 (3.17) dia. 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 )
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